insert loss造句
例句与造句
- 3 high frequency signal low insert loss , high isolation , high flatness index inside
3高频信号插入损耗低隔离度高带内平坦度指标高 - The study of muffier ' s insert loss based on gt - power with parallel of expansionary insert - pipe inside of two rooms
的并联内插管双室扩张式消声器插入损失研究 - Insert loss of the mems shatter will be no more than 3db in the whole frequency and the phase shifter is 25
Sf纠。 o器，所有弹州段完好振动的寿命为3x10 ‘次。 - At present the equation of insert loss hasn ' t indicated the effect of absorption , only refers to the effect of sound insulation
摘要目前对声屏障的插入损失计算所用的公式，没有体现材料吸声对绕射声衰减的作用。 - This passive circuit exhibits a measured 2db insert loss and 11db return loss . also , the theory of 3db power splitter is described
实测结果表明经过改进的功率分配/合成网络在30 . 53ghz到39ghz范围内损耗小于2db ,回波损耗优于10db 。 - It's difficult to find insert loss in a sentence. 用insert loss造句挺难的
- In contrast with the conventional filters , hts filters provided many advantages , such as much less insert loss , more steep edge , smaller size and easier integration
相对于传统滤波器，高温超导滤波器具有带内插损小，带边陡峭，体积小、易于集成等优点。 - At the same time , we have manufactured a transition from microstrip line to rectangle waveguide , working in full ka - band . the insert loss of a single transition is between 0 . 25db and 1db
同时，完成了ka全频段微带波导过渡的研制，在26 . 5 39 . 5ghz频率范围内，单个微带波导过渡的插损在0 . 25 1db - In 32ghz ~ 37ghz , the insert loss is about 0 . 2db . in the millimeter - wave system which chiefly using waveguide as transmission line , the transition between waveguide and microstrip is absolutely necessarily
其特点除了损耗低外，无需阻性材料，制作工艺简单，可以在常用的软基片上做出高性能的功率分配、合成网络，值得推荐。 - In the paper , the transition of ka band rectangular waveguide to micro strip probe and the back - to - back structure are designed . the measurement results indicated the low insert loss and low return loss from 35 ghz to 40 ghz
本文设计了ka波段矩形波导到微带探针过渡结构以及背对背结构,测试结果表明,在35 40ghz频率范围内,其插入损耗和回波损耗都比较小。 - In order to realize low half - wave voltage , high polarzation extinction ratio , low pigtailing polarization crosstalk , low insert loss , precise tapped power ( ratio ) and good splitting beam ratio , the optimum design was performed
为了实现低的半波电压、高的偏振消光比、低尾纤串音、低插入损耗、精确的抽头功率比和良好的分束比,我们对器件结构进行了优化设计。 - The insert loss of the passive circuit is less than 3 . 5db , return loss better than 10db . the ammic5040 is used to drive the tga1141 , and the power is splited into two signals , each of these is to drive tag4517 . at the output port , the power is 4w
无源网络损耗小于3 . 5db ,回波损耗优于10db 。第一级放大器采用ammc5040以驱动tga1141 ,通过功率分配器将信号分为两路以驱动两路tga4517功率放大器。最后获得了4w连续波功率输出。 - This thesis mainly analyze the structure of switch the circuit ' s form and some of manufacturing technic . under the given frequency band , the switch has flat capability of insert loss and isolation , and can satisfy the need of millimeter - wave system
本课题主要对开关的结构、电路形式及制作工艺等方面进行了一定的分析，使得毫米波鳍线pin管开关在给定频率范围内，具有平坦的插入衰减和隔离度特性，满足毫米波系统的需要。 - Large signal model of gaas mesfet is built and , in the light of advanced pspice circuit simulation programme , the circuit transient and dc operation analyse and speed performances are calculated . and also , the inserted loss and isolation are optimized by microwave circuit software touchstn of eesof company
同时，建立了gaasmesfet器件大信号模型，用先进的pspice电路模拟程序对所设计的电路进行瞬态分析和直流工作点分析，计算电路的速度性能；用eesof公司的touchstn微波电路设计软件，进行开关的插入损耗和隔离度的优化设计。 - The tests of e - o applications by our flux ktp has been realized , the results showed : optical waveguides fabricated by using an ion - exchange process , which have an exchange - ion concentration depth profile and refractive - index profile , is close to a complementary error - function distribution , optical homogeneity and device thermal stability is much better . amplitude modulation switch formed by our flux ktp has the contrast ratio of 150 : 1 and insert loss is 2 . 5 % at 1064 nm . high quality optical pulse with 1 ns width was cut successfully by using an e - o modulator from a laser pulse with 50 ns width , this modulator had run for three years , and the crystal did n ' t blackened , it showed our low conductivity flux ktp can endure high modulation voltage for a very long time
Ktp晶体的电光应用试验表明：用离子交换法制作的电光波导，其离子交换浓度、折射率变化符合余弦误差函数，光学均匀性以及器件的温度稳定性较好；制作的强度调制电光开关，消光比为150 ： 1 ，对1064nm激光的插入损耗为2 . 5 ；制作的电光调制器用于激光脉冲整形试验，从脉冲宽度50ns的激光脉冲削出脉宽1ns的高质量光脉冲，该电光开关经过长达三年多的使用，没有出现晶体变黑现象，说明本实验的低电导率ktp晶体能够耐受长时间的调制电压。